solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com designer?s data sheet smd. 5 sft 6800s.5 2 a / 50 0 volts np n switching transistor features: switching transistor small f ootprint s ur face m ount d evice with e xcellent t hermal p roperties tx, txv, s - level s creening a vailable pn p c omplimentary p arts a vailable (sft1192 s eries) maximum ratings symbol value units collector ? emitter vo ltage v ceo 40 0 volts collector ? base voltage v cbo 5 0 0 volts emitter ? base voltage v ebo 10 volts continu ou s collector current i c 2 amps power dissipation @ t c = 25oc power dissipation @ t a = 25oc note 1 note 2 p d 1 5 1 w operating & storage tem perature top & tstg - 65 to +200 oc maximum thermal resistance junction to case and to a mbient r q jc r q ja 3 (typ 2 ) 75 oc/w note1 : d erated 333 mw/c above t c = 1 0 5 c note2 : d erated 13 . 33 mw/ c above t a = 7 5c pin 1 = collector; pin 2= emitter; pin 3= base note: all specifications are subject to change without notification. scd's for these device s should be reviewed by ssdi prior to release. data sheet #: tr0088a doc
solid state devices, inc. 14830 valley view blvd * la mirada, c a 90638 phone: (562) 404 - 7855 * fax: (562) 404 - 1773 ssdi@ssdi - power.com * www.ssdi - power.com sft 6800s.5 electrical characteristic 4 / symbol min typ max units collector emitter breakdown voltage i c = 20 ma bv c e o 400 ?? ?? v olts collector base breakdown voltage i c = 100 ua bv c b o 500 800 ?? v olts emitter base breakdown voltage i e = 20 ua bv eb o 10 11.5 ?? v olts collector cutoff current v cb = 400 v i c bo ?? 0.0 5 0.2 m a collector cutoff current v ce = 450 v, v be = 1.5 v i cev ?? 0.01 0.2 m a emitter cutoff current v eb = 6.0 v i ebo ?? 0.01 0.2 m a dc forward current transfer ratio * v ce = 5 v, i c = 5 0 ma v ce = 5 v, i c = 500 ma v ce = 5 v, i c = 1 a h fe1 h fe2 h fe4 5 0 4 0 15 85 95 50 ?? ?? ?? collector to emitter saturation voltage i c = 5 0 0 ma, i b = 50 ma v ce (sat)1 ?? 0.25 0.5 v olts base to emitter saturation voltage i c = 5 0 0 ma, i b = 50 ma v b e (sat)1 ?? 0.8 1. 0 v olts freque ncy transition (small signal current gain) @ f= 20 mhz v ce =10v, i c =50ma, f= 20 mhz f t 25 35 ?? mhz output capacitance v cb = 3 0v, f = 1 ?2 mhz c obo ?? 30 4 0 pf turn - on t ime v cc = 330 v, i c = 500 ma, i b1 =i b2 = 100 ma; r b1 = r b2 = 330 w t on ?? 115 7 00 ns t urn - off t ime v cc = 330v, i c = 500 ma, i b1 =i b2 = 100 ma ( r b1 = r b2 = 100 o , pw = 2 m s) t off ?? 1700 2000 ns note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sh eet #: tr0088a doc notes: * pulse test: pulse width = 300 m sec, duty cycle = 2% 1 / for ordering information, price, availability contact factory. 2 / screening per mil - prf - 19500 3 / for package outlines contact factory. 4 / unless otherwise specified, all ele ctrical characteristics @ 25oc.
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